NTD4906NT4G【PDF 1/8 页】MOSFET N-CH 30V 10.3A SGL DPAK

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Sheet目录487

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NTD4906N

Power MOSFET

30 V, 54 A, Single N ? Channel, DPAK/IPAK

Features

? Low R DS(on) to Minimize Conduction Losses

? Low Capacitance to Minimize Driver Losses

? Optimized Gate Charge to Minimize Switching Losses

? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

? CPU Power Delivery

? DC ? DC Converters

MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)

V (BR)DSS

30 V

http://onsemi.com

R DS(on) MAX

5.5 m W @ 10 V

8.0 m W @ 4.5 V

I D MAX

54 A

Parameter

Symbol

Value

Unit

Drain ? to ? Source Voltage

Gate ? to ? Source Voltage

V DSS

V GS

" 20

N ? Channel

Continuous Drain

Current (R q JA )

(Note 1)

T A = 25 ° C

T A = 100 ° C

I D

9.9

Power Dissipation

(R q JA ) (Note 1)

T A = 25 ° C

P D

2.6

2 3

Continuous Drain

Current (R q JA ) (Note

Power Dissipation

(R q JA ) (Note 2)

Continuous Drain

Current (R q JC )

(Note 1)

Steady

State

T A = 25 ° C

T A = 100 ° C

T A = 25 ° C

T C = 25 ° C

T C = 100 ° C

I D

P D

I D

10.3

7.3

1.38

1 2

CASE 369AA

DPAK

(Bent Lead)

STYLE 2

CASE 369AD CASE 369D

IPAK IPAK

(Straight Lead) (Straight Lead

DPAK)

Power Dissipation T C = 25 ° C

(R q JC ) (Note 1)

Pulsed Drain Current t p =10 m s T A = 25 ° C

Current Limited by Package T A = 25 ° C

Operating Junction and Storage Temperature

Source Current (Body Diode)

Drain to Source dV/dt

P D

I DM

I DmaxPkg

T J , T stg

I S

dV/dt

37.5

223

? 55 to

175

6.5

° C

V/ns

Drain

MARKING DIAGRAMS

& PIN ASSIGNMENTS

Drain

Source Gate Drain Source

Single Pulse Drain ? to ? Source Avalanche E AS 48 mJ

Energy (T J = 25 ° C, V DD = 50 V, V GS = 10 V,

L = 0.1 mH, I L(pk) = 31 A, R G = 25 W )

Lead Temperature for Soldering Purposes T L 260 ° C

(1/8 ″ from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1 Drain 3

Gate

Gate Drain Source

A = Assembly Location

Y = Year

WW = Work Week

4906N = Device Code

G = Pb ? Free Package

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

? Semiconductor Components Industries, LLC, 2013

October, 2013 ? Rev. 5

Publication Order Number:

NTD4906N/D

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